| Stephen Hersee | The Growth of GaN Nanowires and their Electrical and Optical Characteristics | | University of New Mexico, USA
|
Ian Ferguson
| MOVPE growth of transition-metal doped GaN and ZnO for spintronic applications | | Georgia Institute of Technology,
Atlanta, USA |
Yasuyuki Kobayashi
| Boron Nitride Grown by MOVPE | | NTT Basic Research Laboratories,
Atsugi, Japan |
| Alois Krost | Hetero- and Homoepitaxy of ZnO by MOVPE |
| Otto-von-Guericke-University Magdeburg, Germany |
Nicolas Grandjean
| GaN based vertical surface emitting devices
| | EPFL, Lausanne, Switzerland
|
Trevor Martin
| GaN materials for microwave devices : a review of the requirements, challenges and progress
| | Qinetiq, Great Britain |
| Yasuhiko Arakawa | Advances in MOVPE-grown quantum dots for semiconductor lasers at telecom wavelength | | University of Tokyo, Japan |
Thomas Kuech | MOVPE growth of Antimonide-based alloy materials for long wavelength applications | | University of Wisconsin-Madison, USA |
| Andrei Sirenko | High angular resolution microdiffraction analysis
for complex micro and nanostructures using synchrotron radiation | | New Jersey Institute of Technology,
Newark, USA |
| Mark A Stan | Very High Efficiency Triple Junction Solar Cells by MOVPE | | Emcore Photovoltaics, USA |
| Nicole Proust | Heath and Safety at work : device epitaxy | | Thales Research & Technology, Palaiseau, France |
| Hiroo Yonezu | III-V epitaxy on Si for photonics applications | | Toyohashi University of Technology, Japan |
| Chih-Chung Yang | Nitride-based white-light light-emitting diodes | | National Taiwan University, Taiwan |
| Stuart J C Irvine | MOVCD of thin film photovoltaic solar cells – next generation production technology? | | OpTIC Technium, North Wales, UK |
