| Main Topics |
- A : Nano-epitaxyThis is a very important technology in modern physics. The symposium will cover the most recent results in nano-epitaxy for optoelectronic applications. The first class of self-organized semiconductor , nanowires and nanostructured materials - B : Unconventional and Novel MaterialsNovel materials are the most promising solutions to meet future needs of optoelectronic devices. - C : Wide Bandgap MaterialsWide bandgap materials GaN, AlN, InN and related compounds now play an important role in a variety of high technology of opto-electronic devices. There are, however, still many challenges to overcome and new applications to explore. The IC-MOVPE conference will illustrate the recent progress in this field and the latest trend of epitaxial growth control and new application domains. - D : Arsenide, Phosphide and Diluted NitrideThey are key semiconductors for the production of electronics, optoelectronic and photonic devices. The symposium will discuss the properties of bulk materials, quantum well and nano structures, doping, characterization, applications, and devices. - E : Substrates and Template SubstratesAll substrate-related issues of the epitaxial processes are in the focus, for example: template substrates, epi-ready surface preparation, optimal conductivity range, off-axis surfaces, tolerable dislocation density, influence of residual lattice strain etc. These information are vital for the epitaxial growers in order to meet the device performances. - F : Antimonide MaterialsDue to their unique band gap and lattice properties, antimonide-based materials are particularly attractive for high-frequency, low noise, and low power-consumption electronic devices, as well as for long wavelength emitters and detectors. - G : In Situ and Ex Situ characterizationsA combination can be used to understand the growth model, analyse the surfaces and interfaces and to control the device structure parameters (strains, thicknesses, compositions) and properties (structural, optical and electrical). - H : Structures for device ApplicationsQuantum wells, quantum dots, and nano heterostructures growth and characterizations will be the main part covered in this conference - I : New precursors, safety and environment issuesMOVPE is the method of choice due to the use of large scale multiwafer reactors. Apart from economical aspects critical issues are safety and environmental problems related to their hazards gases and precursors. The symposium will cover the latest progress in novel precursors, the safety issues and environment protection. - J : Modeling and new reactor designAmong the future challenges for MOVPE from an industrial perspective will be in the areas of modeling and simulation. A progress in these areas as well as the process control and high capacity reactor design will help to solve these important challenges from an industrial perspective. - K : II-VI Materials Such as ZnBeTe, ZnMnTe, ZnMgTe and CdSeTe have been a concerted due to their ability to serve as novel materials in optical, electrical and magnetic applications. For example, the availability of a broad range of II-VI wide band gap materials, and the ability to tune their band gaps over a wide range of energies by either composition or quantum confinement lead to new generation of LEDs, solar cells and other advanvced optoelectronic devices. |
